r07ds1248ej0100 rev.1.00 page 1 of 6 feb 12, 2015 preliminary data sheet np179n04tuk 40 v ? 180 a ? n-channel power mos fet application: automotive description the np179n04tuk is n-channel mos field effect transistors designed for high current switching applications. features ? super low on-state resistance r ds(on) = 1.25 m max. (v gs = 10 v, i d = 90 a) ? low ciss ciss = 8900 pf typ. (v ds = 25 v) ? designed for automotive application and aec-q101 qualified ordering information part no. lead plating packing package NP179N04TUK-E1-AY * 1 pure sn (tin) tape 800 p/reel taping (e1 type) to-263-7pin np179n04tuk-e2-ay * 1 taping (e2 type) note: * 1 pb-free (this product does not contain pb in the external electrode) absolute maximum ratings (t a = 25c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 40 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 180 a drain current (pulse) * 1 i d(pulse) 720 a total power dissipation (t c = 25c) p t1 288 w total power dissipation (t a = 25c) * 2 p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ?55 to +175 c repetitive avalanche current * 3 i ar 66 a repetitive avalanche energy * 3 e ar 435 mj notes: *1 t c = 25c, p w 10 s, duty cycle 1% * 2 mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m) *3 r g = 25 , v gs = 20 v 0 v thermal resistance channel to case thermal resistance r th(ch-c) 0.52 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w r07ds1248ej0100 rev.1.00 feb 12, 2015
np179n04tuk preliminary r07ds1248ej0100 rev.1.00 page 2 of 6 feb 12, 2015 electrical characteristics (t a = 25c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ? ? 1 a v ds = 40 v, v gs = 0 v gate leakage current i gss ? ? 100 na v gs = 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 2.0 3.0 4.0 v v ds = v gs , i d = 250 a forward transfer admittance * 1 | y fs | 65 130 ? s v ds = 5 v, i d = 90 a drain to source on-state resistance * 1 r ds(on) ? 1.05 1.25 m v gs = 10 v, i d = 90 a input capacitance c iss ? 8900 13350 pf v ds = 25 v v gs = 0 v f = 1 mhz output capacitance c oss ? 1200 1800 pf reverse transfer capacitance c rss ? 440 800 pf turn-on delay time t d(on) ? 33 80 ns v dd = 20 v, i d = 90 a v gs = 10 v r g = 0 rise time t r ? 12 30 ns turn-off delay time t d(off) ? 110 220 ns fall time t f ? 16 40 ns total gate charge q g ? 160 240 nc v dd = 32 v v gs = 10 v i d = 180 a gate to source charge q gs ? 42 ? nc gate to drain charge q gd ? 42 ? nc body diode forward voltage * 1 v f(s-d) ? 0.9 1.5 v i f = 180 a, v gs = 0 v reverse recovery time t rr ? 63 ? ns i f = 180 a, v gs = 0 v di/dt = 100 a/ s reverse recovery charge q rr ? 100 ? nc note: * 1 pulsed test test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 duty cycle 1% = 1 s v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
np179n04tuk preliminary r07ds1248ej0100 rev.1.00 page 3 of 6 feb 12, 2015 typical characteristics (t a = 25c) derating factor of forward bias safe operating area 0 20 40 60 80 100 120 dt - percentage of rated power - % 0 25 50 75 100 125 150 175 t c - case temperature - c 100 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s total power dissipation vs. case temperature 0 50 100 150 200 300 250 350 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power disslpation - w forward bias safe operating area 0.1 1 10 100 1000 0.1 1 10 100 v ds - drain to source voltage - v i d - drain current - a transient thermal resistance vs. pulse width 0.01 0.1 1 10 100 1000 r th(t) - transient thermal resistance - c/w single pulse r th(ch-c) = 0.52c/w r th(ch-a) = 83.3c/w power dissipation limited i d(dc) = 180 a r ds(on) limited (v gs =10 v) t c = 25c single pulse secondary breakdown limited pw = 1 ms pw = 10 ms dc pw = 100 s i d(pulse) = 720 a
np179n04tuk preliminary r07ds1248ej0100 rev.1.00 page 4 of 6 feb 12, 2015 forward transfer characteristics 0.001 0.01 0.1 1 10 1000 100 012345 v gs - gate to source voltage - v i d - drain curent - a gate to source threshold voltage vs. channel temperature 0 1 2 3 4 ?100 ?50 0 50 100 150 200 t ch - channel temperature - c v gs(th) - gate to source threshold voltage - v forward transfer admittance vs. drain current 1 10 1000 100 0.1 1 10 100 1000 i d - drain current - a |y fs | - forward transfer admittance - s drain to source on-state resistance vs. drain current 0 2 1 3 1 10 100 1000 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage 0 5 10 15 20 v gs - gate to source voltage - v drain current vs. drain to source voltage 0 100 200 300 400 500 600 800 700 0 0.2 0.4 0.6 0.8 v ds - drain to source voltage - v i d - drain current - a 0 2 1 3 r ds(on) - drain to source on-state resistance - m v gs = 10 v pulsed v gs = 10 v pulsed v ds = v gs i d = 250 a pulsed i d = 36a 90a 180a v ds = 5 v pulsed t a = ?55c ?25c 25c 75c 100c 125c 150c 175c v ds = 10 v pulsed t a = ?55c ?25c 25c 75c 100c 125c 150c 175c
np179n04tuk preliminary r07ds1248ej0100 rev.1.00 page 5 of 6 feb 12, 2015 capacitance vs. drain to source voltage 100 1000 100000 10000 0.01 0.1 1 10 100 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance -pf reverse recovery time vs. drain current 1 10 100 0.1 1 10 1000 100 i f - drain current - a t rr - reverse recovery time - ns switching characteristics 1 10 100 1000 0.1 1 10 1000 100 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns dynamic input/output characteristics 0 5 10 15 20 25 30 35 0 20 40 60 80 120 160 180 100 140 q g - gate charge - nc v ds - drain to source voltage - v 0 2 4 6 8 10 14 12 v gs - gate to source voltage - v source to drain diode forward voltage 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 v f(s-d) - source to drain voltage - v i f - diode forward current - a drain to source on-state resistance vs. channel temperature ?100 ?50 0 50 100 150 200 t ch - channel temperature - c 0 2 1 3 r ds(on) - drain to source on-state resistance - m pulsed v gs = 10 v v gs = 0 v di/dt = 100 a/s v gs = 0 v v gs = 10 v i d = 90 a pulsed v dd = 20 v v gs = 10 v r g = 0 t d(off) t d(on) t f t r v gs = 0 v f = 1 mhz c iss c oss c rss v gs v ds v dd = 32 v 20 v 8 v i d = 180 a
np179n04tuk preliminary r07ds1248ej0100 rev.1.00 page 6 of 6 feb 12, 2015 package drawing (unit: mm) to-263-7pin (mp-25zt) (mass: 0.128 g typ.) renesas code: prss0008db-a 8.4 typ. 10.0 0.2 7.6 typ. 8 9.15 0.2 14.85 0.5 1.2 0.3 1.27 typ. 0.6 0.15 2.5 10.0 0.2 123 5 467 4.45 0.2 1.3 0.2 0.025 to 0.25 0.5 0 . 2 0 to 8 0.25 2.54 0.25 1. gate 2, 3, 5, 6, 7. source 4, 8. fin (drain) equivalent circuit source body diode gate drain remark: strong electric field, when exposed to this device, can cause destructi on of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly diss ipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np179 n04tuk data sheet rev. date description page summary 1.00 feb 12, 2015 ? first edition issued
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operati on of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rig hts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". th e recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you mus t check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have sp ecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance desig n. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatibi lity of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactur e, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this do cument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or other wise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by yo u or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesas electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this docu ment or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-own ed subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2801 scott boulevard santa clara, ca 95050-2549, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 9251 yonge street, suite 8309 richmond hill, ontario canada l4c 9t3 tel: +1-905-237-2004 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, no.27 zhichunlu haidian district, beijing 100191, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 301, tower a, central towers, 555 langao road, putuo district, shanghai, p. r. china 200333 tel: +86-21-2226-0888, fax: +86-21-2226-0999 renesas electronics hong kong limited unit 1601-1611, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2265-6688, fax: +852 2886-9022 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei 10543, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre, singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 1207, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics india pvt. ltd. no.777c, 100 feet road, hal ii stage, indiranagar, bangalore, india tel: +91-80-67208700, fax: +91-80-67208777 renesas electronics korea co., ltd. 12f., 234 teheran-ro, gangnam-gu, seoul, 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2015 renesas electronics corporation. all rights reserved. colophon 5.0
|
